Prediction of the Silicon Yield on using Different SiO2/C/SiC Ratios

Document Type : Original Article


1 Minia university

2 Department of Electronics and Electrical Communications Engineering, Cairo University, Giza, Egypt

3 Chemical Engineering Department, Faculty of Engineering, Minia University, Minia, Egypt

4 Department of Chemical Engineering, Faculty of Engineering, Minia University, Egypt.


Silicon is produced by carbothermal of SiO2 at high temperatures from 1600 °C to 3000 °C in an electric arc furnace. During production, significant amounts of carbon monoxide are observed.
Carbon monoxide is one of the gases harmful to the environment, so care must be taken to eliminate or reduce it.
In this paper, the effect of carbon on the yield of silicon is discussed in order to reduce the amount of carbon monoxide (CO) production without affecting the yield of silicon. That discussing and illustrating by drawing the results of prediction of silicon has production using different ratios of SiO2/C/SiC.
The results showed that the increase in carbon moles leads to an increase in the yield of carbon monoxide. Specifically, 9 moles of carbon can be replaced with 1 mole of silicon carbide to get half the carbon monoxide output and to maintain the yield of silicon at 2200 K.