Document Type : Original Article
Authors
1
Electrical Engineering Department, Faculty of Engineering, Minia University, Minia 61517, Egypt
2
Department of Electrical Engineering, Faculty of Engineering, Minia University, Minia , Egypt.
3
Department of Electronics & Communications Engineering, Faculty of Engineering, Minia University, Minia, Egypt. Electrical Engineering Department, College of Engineering, Prince Sattam Bin Abdulaziz University, Wadi Addwasir 11991,
4
Department of Electronics and Communications Engineering, Faculty of Engineering, Ain Shams University, Egypt
5
3Department of Electrical Engineering, Faculty of Information Science and Electrical Engineering, Kyushu University, Japan
Abstract
In this paper, a development of Gallium Nitride -High-Electron-Mobility Transistor (HEMT) model is presented. Static characteristics are extracted from a commercial device data sheet and fitted into empirical functions using MATLAB software package. The stability performance of GaN devices is important to work in most of applications. The equivalent circuit model is tested in a simple configuration for plotting I-V curve through estimating parameters of the gate to drain capacitance (CGD) and drain to source capacitance (CDS). These parasitic capacitances are essential to provide a comprehensive understanding of the switching behavior of the device as well as critical parameters to enhance model static current-voltage characteristics .A stable performance of I-V curve has been achieved when using the proposed improved model equations of those capacitances. The obtained results show that the proposed model of Gallium Nitride -HEMT is favorable for use in high frequency, high efficiency, and high power density power conversion applications.
Keywords
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